PART |
Description |
Maker |
SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) From old datasheet system Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor Hitachi Semiconductor
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
TPC8112 |
Field Effect Transistor Silicon P Channel MOS Type(U-MOS III)
|
Toshiba Semiconductor
|
TPCF8302 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
2SK3397 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
|
TOSHIBA[Toshiba Semiconductor]
|
TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|